Design, analysis, and transmission system performance of a 41 GHz silicon photonic modulator.

نویسندگان

  • David Patel
  • Samir Ghosh
  • Mathieu Chagnon
  • Alireza Samani
  • Venkat Veerasubramanian
  • Mohamed Osman
  • David V Plant
چکیده

The design and characterization of a slow-wave series push-pull traveling wave silicon photonic modulator is presented. At 2 V and 4 V reverse bias, the measured -3 dB electro-optic bandwidth of the modulator with an active length of 4 mm are 38 GHz and 41 GHz, respectively. Open eye diagrams are observed up to bitrates of 60 Gbps without any form of signal processing, and up to 70 Gbps with passive signal processing to compensate for the test equipment. With the use of multi-level amplitude modulation formats and digital-signal-processing, the modulator is shown to operate below a hard-decision forward error-correction threshold of 3.8×10-3 at bitrates up to 112 Gbps over 2 km of single mode optical fiber using PAM-4, and over 5 km of optical fiber with PAM-8. Energy consumed solely by the modulator is also estimated for different modulation cases.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Large optical spectral range dispersion engineered silicon-based photonic crystal waveguide modulator.

We present a dispersion engineered slow light silicon-based photonic crystal waveguide PIN modulator. Low-dispersion slow light transmission over 18 nm bandwidth under the silica light line with a group index of 26.5 is experimentally confirmed. We investigate the variations of the modulator figure of merit, V(π) × L, as a function of the optical carrier wavelength over the bandwidth of the fun...

متن کامل

Ultralinear heterogeneously integrated ring-assisted Mach–Zehnder interferometer modulator on silicon

A linear modulator is indispensable for radio frequency photonics or analog photonic link applications where high dynamic range is required. There is also great interest to integrate the modulator with other photonic components, to create a photonic integrated circuit for these applications, with particular focus on silicon photonics integration in order to take advantage of complementary metal...

متن کامل

A CMOS-compatible silicon photonic platform for high-speed integrated opto-electronics

We have developed a CMOS-compatible Silicon-on-Insulator photonic platform featuring active components such as pi-n and photoconductive (MIM) Ge-on-Si detectors, p-i-n ring and Mach-Zehnder modulators, and traveling-wave modulators based on a p-n junction driven by an RF transmission line. We have characterized the yield and uniformity of the performance through automated cross-wafer testing, d...

متن کامل

High speed silicon Mach-Zehnder modulator.

We demonstrate a silicon modulator with an intrinsic bandwidth of 10 GHz and data transmission from 6 Gbps to 10 Gbps. Such unprecedented bandwidth performance in silicon is achieved through improvements in material quality, device design, and driver circuitry.

متن کامل

Experimental parametric study of 128 Gb/s PAM-4 transmission system using a multi-electrode silicon photonic Mach Zehnder modulator.

We present an experimental study and analysis of a travelling wave series push-pull silicon photonic multi-electrode Mach-Zehnder modulator (ME-MZM) and compare its performance with a single-electrode travelling wave Mach-Zehnder modulator (TWMZM). Utilizing the functionality of the ME-MZM structure plus digital-signal-processing, we report: 1) the C-band transmission of 84 Gb/s OOK modulated d...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:
  • Optics express

دوره 23 11  شماره 

صفحات  -

تاریخ انتشار 2015